SiC衬底倾角对MOCVD生长GaN外延层质量的影响
Influence of the misorientation of SiC substrate on the quality of GaN epilayer grown by MOCVD
利用金属有机物化学气相沉积(MOCVD）方法，在相同的条件下在不同倾角的Si面6H-SiC衬底上生长GaN外延层。采用原子力显微镜(AFM)观察GaN表面形貌；用X射线衍射仪（XRD）、光致发光谱及拉曼（Raman）光谱对晶体质量进行了研究。测试结果表明外延层的表面粗糙度随衬底倾斜角度增大而变大。外延层内部的张应力随衬底倾斜角度增加而增大。光学质量随倾斜角度增大而降低。实验结果表明衬底倾角能够影响外延层的位错密度，并对外延薄膜的光学性质有一定改变。
GaN epilayer has been grown on the 6H-SiC substrate with different misorientation angle by metalorganic chemical vapor deposition (MOCVD). The surface morphologies of GaN epilayer was examined by atom force microscope (AFM). The structural quality of the samples was assessed by X-ray diffraction and Raman spectra. It was found that the surface roughness of the GaN epilayer increases with the angle of the substrate. The internal tensile stress increases with the substrate angle. Optical quality reduced with the increase of the substrate angle.The result show that misorientation angle can influence dislocation density and the optical properties of epitaxial films.
柳阳、宋琳、夏晓川、申人升、杜国同、刘建勋、梁红伟、张克雄
晶体学材料科学
MOCVD氮化镓碳化硅倾斜衬底
MOCVDGaNSiCsubstrate
柳阳,宋琳,夏晓川,申人升,杜国同,刘建勋,梁红伟,张克雄.SiC衬底倾角对MOCVD生长GaN外延层质量的影响[EB/OL].(2014-04-30)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201404-456.点此复制
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