富磷熔体生长InP单晶的均匀性研究

oped InP single crystals were grown by in-situ phosphorous injection synthesis liquid encapsulated Czochraski (LEC) method. The structural uniformity of differently doped InP wafer samples were investigated by rapid photoluminescence mapping, scanning electron microscopy and fourier transform infrared spectroscopy, respectively. The experimental results indicate that there are irregular pores existed in the P-rich LEC grown InP ingots. And this induced the inhomogeneity of the crystal quality and lattice constant. The uniformity of the dopant distribution across the wafer is in?uenced by these pores and the concentration surrounded is higher than the rest regions.