u掺杂ZnO薄膜中Au的化学价态及其对薄膜电学和光学性质的影响
hemical states of gold doped in ZnO films and its effect on electrical and optical properties
利用射频磁控溅射和后热处理的方法制备了Au掺杂的ZnO (ZnO:Au) 薄膜。研究发现在室温条件下生长的ZnO:Au薄膜中，Au以正一价替代Zn位存在（AuZn1+），随着退火温度的升高，部分替位存在的一价Au从ZnO晶格中析出形成金属金，并存在于ZnO:Au晶界处。AuZn1+作为受主，其相对含量随退火温度升高而减小，导致ZnO:Au导电类型由p向n转变。室温光致发光结果表明，在退火温度小于800℃的情况下ZnO:Au发光淬灭，而当退火温度达到800 ℃时，ZnO:Au表现出两个分别位于2.417和3.299 eV的发光峰。本文对ZnO:Au薄膜中Au的化学价态进行了表征，讨论了Au的化学价态对ZnO电学及光学性质的影响并给出了相应的物理机制。
Gold-doped ZnO (ZnO:Au) films were prepared by radio frequency magnetron sputtering and post annealing techniques. It is found that the Au substitutes for Zn in positive univalence (AuZn1+) in the ZnO:Au film grown at room temperature. However, as the ZnO:Au is annealed at temperatures above 600 ℃, some of the AuZn1+ precipitate from the ZnO:Au and exist in a form of metal in the film. The AuZn1+ works as acceptor, and the conductivity of the ZnO:Au changes from p-type to n-type with decreasing the content of the AuZn1+. Room temperature photoluminescence (PL) measurement indicated that ZnO:Au film shows PL quenching as annealed below 800 ℃, but has two PL peaks, located at 2.417 and 3.299 eV, respectively, as annealed at 800 ℃. The mechanism of the effect of the chemical states of Au on electrical and optical properties of the ZnO:Au is suggested in the present paper.
徐莹、王海珠、姚斌、李继超、丁占辉、李永峰
电工材料物理学电化学工业
凝聚态物理氧化锌薄膜磁控溅射化学价态金掺杂
ondensed matter physicsZnO filmMagnetron sputteringChemical stateAu doping
徐莹,王海珠,姚斌,李继超,丁占辉,李永峰.u掺杂ZnO薄膜中Au的化学价态及其对薄膜电学和光学性质的影响[EB/OL].(2013-11-22)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201311-442.点此复制
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