半导体器件铜线焊接的弹坑问题研究与参数优化

opper wire ,because of it's low cost, is widely used in wire bonding process for semiconductor packing.But crater defects which occured randomly during copper wire bonding always make device failure with IR and VR.In this paper,crater defects is inverstigated and then process window is optimized,study and find the cause of crater occasion,and look for the safe process parameters window.We use DOE method to analyze parameters during wire bonding process,especially the internal influence with each other.Verify the relationship between wie pull force and ball shear force to crater defect.