提拉法蓝宝石生长过程中包裹体杂质对界面的影响
he Effects of Melt Inclusion on Interface Shape during the CZ Sapphire Growth
本文研究了提拉法生长蓝宝石晶体过程中不同类型的包裹体杂质对晶体生长界面形状的影响,通过二维和三维数值模拟,计算出不同类型杂质情况下的晶体生长界面形态,对于包裹体的类型,本研究采用改变杂质聚集区域光学性质作定性简化,结果表明,晶体中心或者表明部位杂质的存在使相应部位界面形状弯曲,不透明包裹体杂质使其向上弯曲,透明包裹体杂质使其向下弯曲,同时三维效应导致生长炉内温度场和流场的非轴对称性被展示出来。
Global modeling (2D/3D) has been performed to investigate the effects of different melt inclusions on the interface shape during the Czochralski sapphire crystal growth. The purpose is to obtain the growth interface shape accurately. Through changing optical properties at the local position during the calculation of the radiation, interface shapes with the presence of the various inclusions are obtained. The results show that, inclusions at the center of the crystal or at the region close to the crystal surface make the corresponding parts of interface distorted. Opaque inclusions make local interface distorted up, while transparent inclusions cause local interface distorted down. It is further found that three-dimensional effects cause non-axisymmetric temperature distribution and fluid flow in the growth furnace.
王森、张全江、方海生、田俊
晶体学材料科学
蓝宝石提拉法包裹体界面形态数值模拟
sapphireCzochralski methodinclusioninterface shapenumerical simulation
王森,张全江,方海生,田俊.提拉法蓝宝石生长过程中包裹体杂质对界面的影响[EB/OL].(2014-11-15)[2025-08-23].http://www.paper.edu.cn/releasepaper/content/201411-214.点此复制
评论