化学浴沉积ZnSe薄膜及其光学特性研究

s an important direct wide-band-gap II-VI semiconductor, ZnSe has been identified as a potential material for the fabrication of blue-green light-diodes, nonlinear optoelectronic components, infrared devices and thin film solar cells. Chemical bath deposition (CBD) is a low cost and less pollution films-making method. Employing triethanolamine (TEA), hydrazine hydrate as the complexing agents, with proper concentration of cation and anion precursors, ZnSe films were deposited. The as-deposited films are light yellow, specula reflective and homogenous, the thickness was about 100-140 nm measured by spectroscopic ellipsometry. When annealed at 400oC in N2 atmosphere, the films are microcrystalline with a sphalerite structure by XRD. The transmission of films is above 70% in visible light area, and the band gap is around 3.0 eV, a litter blue shift compared to the band gap of bulk ZnSe material.