MBE生长的Be掺杂GaAs结构和光学特性研究
he structural and optical properties of Be-doped GaAs grown by MBE
本文报道了分子束外延（MBE）生长的Be掺杂GaAs，通过改变Be掺杂源的温度我们得到了不同掺杂浓度的GaAs样品。利用原子力显微镜（AFM）和霍尔测试仪分别对样品的表面形貌和电学特性进行表征。特别的，在低温和随温度变化的光致发光谱中，与Be受主相关的辐射被观察到，且随着掺杂浓度的增加与Be受主相关的辐射也相应地加强。
In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.
贾慧民、唐吉龙、方铉、房丹、马晓辉、王晓华、常量、魏志鹏
半导体技术光电子技术物理学
Be掺杂GaAs分子束外延光致发光
Be-dopedGaAsMBEPL
贾慧民,唐吉龙,方铉,房丹,马晓辉,王晓华,常量,魏志鹏.MBE生长的Be掺杂GaAs结构和光学特性研究[EB/OL].(2014-08-05)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201408-42.点此复制
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