SiO2/Si衬底上制备增强型ZnO薄膜晶体管
Enhancement mode thin film transistor with nitrogen-doped ZnO channel layer fabricated on SiO2/Si substrate
在NH3和O2的混合气氛下，采用激光分子束外延法（L-MBE）在SiO2/p-Si衬底上制备氮掺杂ZnO薄膜， XRD分析表明ZnO薄膜掺入微量的氮后仍有很高的结晶质量和高度的C轴择优取向性，（0002）面摇摆曲线的半峰宽仅为1.89°；并在此基础上制备了以氮掺杂ZnO薄膜为沟道层、以SiO2为绝缘层的底栅式薄膜晶体管，电学测试表明该晶体管工作在N沟道增强模式，阈值电压为5.15V，电流开关比为104，电子的场迁移率达到2.66 cm2/V•S。
Nitrogen-doped ZnO film was deposited on SiO2/p-Si substrate by L-MBE in the mixed gas of NH3 and O2 .XRD measurement show the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO(0002) plane was only 1.89°.Followly, A bottom-gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO2 severed as insulator was fabricated. Electrical measurement shows the device operates in enhancement mode and exhibits an on/off ratio of 04. The threshold voltage was 5.15V and the channel mobility on the order of 2.66 cm2/V•S has been determined.
侯洵、张景文
半导体技术微电子学、集成电路
ZnO 薄膜激光分子束外延薄膜晶体管迁移率
ZnO thin filmL-MBEThin film transistorChannel mobility
侯洵,张景文.SiO2/Si衬底上制备增强型ZnO薄膜晶体管[EB/OL].(2007-01-15)[2025-07-17].http://www.paper.edu.cn/releasepaper/content/200701-180.点此复制
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