X波段两级低噪声放大器设计
esign of two-stages X-band low noise amplifier
本文采用CEL公司GaAs高电子迁移率晶体管（HEMT）设计供X波段雷达使用的宽带低噪声放大器。在对系统应用和放大器指标进行介绍的基础上，使用ADS软件进行X波段两级低噪声放大器设计。该放大器工作在8.5GHz至9.5GHz宽频范围内，设计增益高于20dB，噪声系数低于1.0dB，1dB压缩点功率输出超过10dBm，输入输出电压驻波比(VSWR)小于2.0。文章对设计过程进行讨论，并给出仿真和优化结果。
In this paper, a broadband low noise amplifier for X-band radar was designed by using high electron mobility transistor (HEMT) from CEL. The system demands and amplifier requirement was introduced briefly at first. The two-stages X-band low noise amplifier was designed with the help of ADS software. The amplifier achieved a noise figure of 1.0 with 20dB gain from 8.5GHz to 9.5GHz. The amplifier exhibits output power of 10dBm at 1dB compression point. The input and output voltage standing wave ratio (VSWR) is below 2.0. The design flow was discussed and results of simulation and optimization was presented.
缪英武
雷达微电子学、集成电路电子电路
电路与系统低噪声放大器宽带雷达
circiuits and systemslow noise amplifierbroadbandradar
缪英武.X波段两级低噪声放大器设计[EB/OL].(2017-05-27)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201705-1410.点此复制
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