ZO薄膜的溶胶-凝胶制备与氮气热处理
Preparation of AZO film by sol-gel method and heat-treatment in N2 atmosphere
本文通过Sol-Gel法制备了透明导电AZO薄膜，在氮气气氛下对薄膜进行了300℃1个小时的热处理。XPS、XRD、SEM、UV-Vis和四探针仪表征了薄膜的结构与性能。结果表明，适当增加掺杂量能提高薄膜的电导率，过多的掺杂反而会降低电导率。掺杂量对薄膜在可见光范围内透射率影响不大，可见光透射率均大于80%。低温氮气热处理可以显著提高薄膜电导率，方阻最低可达270Ω/□。
ZO transparent conductive films were prepared by sol-gel method and heat treated at 300刟C for 1h in N2 atmosphere. Structure and properties of the films were characterized by XPS, XRD, SEM, UV-Vis and four-probe method. The results showed that conductivity of the films increased with increase of doing amount blew an optimum value; excessive dope deteriorated the conductivity. Transparent of the film was above 80% in visible region, which was not effected by doping amount.Conductivity of the film was improved by low temperature heat-treatment in N2 atmosphere, and the lowest sheet resistance was 270
靳正国、金巨江
电工材料材料科学物理学
sol-gel法，AZO，透射率，电导率，方阻
sol-gel mothed dopant conductancestability
靳正国,金巨江.ZO薄膜的溶胶-凝胶制备与氮气热处理[EB/OL].(2008-06-03)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/200806-56.点此复制
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