Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s
Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and se
Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and se
Li, RW、Wang, C、Chen, Y、Zhang, WB、Liu, G、Wang, J
半导体技术微电子学、集成电路电子元件、电子组件
MEMORY DEVICESPOLYMERSPOLYAZOMETHINEMOIETIESCRYSTALLIZATIONCOPOLYMERTRANSPORTMOBILITYACCEPTORFILMS
Li, RW,Wang, C,Chen, Y,Zhang, WB,Liu, G,Wang, J.Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s[EB/OL].(2017-04-06)[2025-08-02].https://chinaxiv.org/abs/201704.00086.点此复制
评论