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首页|Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors

Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors

Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors

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p>Strain engineering&nbsp;of 2D materials is capable of tuning the electrical and optical properties of the materials&nbsp;without introducing additional atoms. However, there are still great challenges in realizing straining&nbsp;of 2D materials with CMOS compatibility. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. We introduce locally non-uniform strains through the cooperative deformation of materials and metal/metal oxide core/shell nanoparticles through cold laser shock. Raman and PL spectra&nbsp;reveal that the tensile strain of MoS<sub>2</sub>&nbsp;changes and the band gap decreases after laser shock. MD simulations are used to investigate the mechanism of the ultrafast straining of CVD-grown 2D materials. Field effect transistors of CVD MoS<sub>2</sub>&nbsp;were fabricated, and the performances before and after straining of the same devices are compared. By adjusting the strain level of MoS<sub>2</sub>, the field effect mobility can be increased from 1.9 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1 </sup>to 44.1 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. This is the maximum value of MoS<sub>2</sub>&nbsp;FETs grown by CVD&nbsp;with SiO<sub>2</sub>&nbsp;as dielectric. As an environment-friendly, large-scale and ultra-fast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D materials strain, which will help to promote the manufacturing of 2D nano electronic devices and optoelectronic devices.</p><p>&nbsp;</p

p>Strain engineering&nbsp;of 2D materials is capable of tuning the electrical and optical properties of the materials&nbsp;without introducing additional atoms. However, there are still great challenges in realizing straining&nbsp;of 2D materials with CMOS compatibility. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. We introduce locally non-uniform strains through the cooperative deformation of materials and metal/metal oxide core/shell nanoparticles through cold laser shock. Raman and PL spectra&nbsp;reveal that the tensile strain of MoS<sub>2</sub>&nbsp;changes and the band gap decreases after laser shock. MD simulations are used to investigate the mechanism of the ultrafast straining of CVD-grown 2D materials. Field effect transistors of CVD MoS<sub>2</sub>&nbsp;were fabricated, and the performances before and after straining of the same devices are compared. By adjusting the strain level of MoS<sub>2</sub>, the field effect mobility can be increased from 1.9 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1 </sup>to 44.1 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. This is the maximum value of MoS<sub>2</sub>&nbsp;FETs grown by CVD&nbsp;with SiO<sub>2</sub>&nbsp;as dielectric. As an environment-friendly, large-scale and ultra-fast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D materials strain, which will help to promote the manufacturing of 2D nano electronic devices and optoelectronic devices.</p

10.12074/202205.00002V1

半导体技术微电子学、集成电路材料科学

2D materialsstrain engineeringlaser shock induced cooperative deformation

2D materialsstrain engineeringlaser shock induced cooperative deformation

.Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors[EB/OL].(2022-04-30)[2025-08-18].https://chinaxiv.org/abs/202205.00002.点此复制

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