rO2单晶薄膜磁电阻及反常霍尔效应研究
he Study of Magnetoresistance and Anomalous Hall Effect in CrO2 Single Crystal Films
本实验采用化学气相沉积法制备了质量良好的CrO2单晶薄膜，验证了Sn掺杂CrO2单晶薄膜的可行性，并报道了纯CrO2薄膜的输运性能，包括磁电阻和反常霍尔效应。发现CrO2单晶薄膜的输运性能具有极强的面内各向异性且与样品的缺陷相关，为今后测试Sn掺杂CrO2薄膜的输运性能提供基础。
rO2 single crystal films were prepared by Chemical Vapor Deposition in this experiment and the feasibility of Sn doped CrO2 single crystal films has been verified. In addition, the magnetoresistance and anomalous Hall Effect have been tested to find that the transport properties of CrO2 single crystal films are very strong in-plane anisotropy and related to the defects of the samples. This will provide the basis for testing the transport properties of Sn doped CrO2 films in the future.
熊锐、丁轶
物理学材料科学晶体学
凝聚态物理学rO2单晶薄膜磁电阻反常霍尔效应
ondensed matter physicsCrO2 single crystal filmsmagnetoresistanceanomalous Hall effect
熊锐,丁轶.rO2单晶薄膜磁电阻及反常霍尔效应研究[EB/OL].(2017-07-04)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201707-1.点此复制
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