Si－TiNx和TiNx－Cu界面反应驱动力热力学分析

In the system consisted of the semiconductor silicon wafer (Si) – the diffusion resistant layer (TiNx) – the metal contact material (Cu), the diffusion couples are formed between Si-TiNx and TiNx-Cu respectively. In the present paper, the driving forces for the interfacial reactions between Si-TiNx and TiNx-Cu couples are analyzed thermodynamically in the related systems of the Ti-Si-N and the Ti-Cu-N ternaries. The interfacial reactions, the microstructure evolution and the phase stabilities are studied. In the interfacial reaction sequence of the Si-TiNx joint, a series of new phases are formed, among which the Si3N4 phase is of high resistivity and will affect the characteristics of the metal-semiconductor contact. The two-phase equilibrium can be reached at the interface between the TiNx-Cu couple and no unfavourable phases are formed.