电流密度对电化学刻蚀硅微通道壁厚的影响
Influence of Current Density on Electrochemical Etching of Silicon Microchannel Plates Pore Wall Thickness
电化学刻蚀过程中如何有效控制微通道壁厚，保证硅微通道阵列能等径生长，是一个值得研究的问题。本文基于电化学腐蚀原理，通过一个对比实验，改变刻蚀的电流密度，观察刻蚀完成后通道壁厚情况，研究了电流密度对硅微通道壁厚情况的影响。通过实验，我们改善了通道壁厚不均匀的情况，侧蚀严重区域从70μm下降到了30μm，得到了壁厚更加均匀的硅微通道结构。
he fabrication of trenches with uniform pore wall thickness is one of the most important problems in electrochemical technology. Based on the principle of electrochemical etching, we designed a contrast experiment by changing the current density, then observed the wall thickness after etching. Studied the influence of current density on electrochemical etching process for silicon microchannel plates pore wall thickness. Though the experiment, side etching region decreased from 70μm to 30μm, improve the process and make a more uniform pore size silicon microchannel structure)
杨继凯、王国政、王云龙、端木庆铎、崔丹丹
电工基础理论电工材料物理学
电化学硅微通道微通道壁厚电流密度
Electrochemical etchingSilicon microchannel platesPore wall thicknessCurrent density
杨继凯,王国政,王云龙,端木庆铎,崔丹丹.电流密度对电化学刻蚀硅微通道壁厚的影响[EB/OL].(2015-08-26)[2025-08-18].http://www.paper.edu.cn/releasepaper/content/201508-143.点此复制
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