温度对ULSI硅衬底化学机械抛光去除速率及动力学的控制研究
ontrol Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process
本文对材料表面化学机械高精密加工的动力学过程及控制过程进行了深入的研究。根据大量实验总结出了CMP的七个动力学过程，在ULSI衬底单晶硅片的CMP研究过程中，确定了在相同机械作用条件下由温度引起的化学过程为CMP控制过程，对影响化学反应的关键因素进行了有效的解决，实现了多材料CMP速率突破性提高。
he kinetics process and control process of chemical mechanical high precision finishing for material surface were studied in this paper. According to the experiments, the seven kinetics process for chemical mechanical polishing(CMP) was generalized. Through investigating the CMP process of ULSI silicon substrate, we found that chemical process was the CMP control process under the same mechanical action condition, which was caused by temperature. Such key factor of influencing chemical reactions was effectively settled, which was advantageous to improving other materials CMP removal rate.
牛新环、王胜利、刘玉岭、檀柏梅
材料科学工程基础科学化学
化学机械抛光动力学过程硅衬底去除速率抛光温度
hemical mechanical polishingKinetics processSilicon substrateRemoval ratePolishing temperature
牛新环,王胜利,刘玉岭,檀柏梅.温度对ULSI硅衬底化学机械抛光去除速率及动力学的控制研究[EB/OL].(2009-01-07)[2025-08-24].http://www.paper.edu.cn/releasepaper/content/200901-242.点此复制
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