lGaN/AlN/GaN HFETs 中极化库仑场散射的影响因素
Influence factors on Polarization Coulomb Field scattering in AlGaN/AlN/GaN HFETs
本文通过室温下测试得到的AlGaN/AlN/GaN HFETs的电流电压特性和电容电压特性，同时结合薛定谔方程与泊松方程自洽求解，研究了极化库仑场散射的影响因素。发现器件中异质结界面处极化电荷的不均匀分布，沟道中二维电子气电子的屏蔽效应及费米能级附近电子的速率均对极化库仑场散射产生影响。
he influence factors on polarization Coulomb field scattering (PCF scattering) in AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) have been studied using capacitance-voltage (C-V), current-voltage (I-V) characteristic techniques, and the self-consistently solving Schr?dinger equation and Poisson equation. It was found that the uneven polarization charge distribution at interface in the devices, the channel two-dimensional electron gas (2DEG) sheet density and the velocity of the electron near Fermi level all influence the PCF scattering. )
吕元杰、林兆军、崔鹏、韩瑞龙、刘艳、付晨
半导体技术
lGaN/AlN/GaN HFETs极化库仑场散射二维电子气
lGaN/AlN/GaN heterostructure field-effect transistorpolarization Coulomb field scatteringthe two-dimensional electron gas
吕元杰,林兆军,崔鹏,韩瑞龙,刘艳,付晨.lGaN/AlN/GaN HFETs 中极化库仑场散射的影响因素[EB/OL].(2016-03-01)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201603-7.点此复制
评论