硅银衬底上氧化锌半导体微腔的光致发光本征模式研究
Photoluminescence Eigen Modes in the ZnO Semiconductor Microcavity on the Ag/Si Substrate
我们报道了室温下置于硅银衬底上的ZnO半导体微腔的光致发光本征模式的研究。实验结果表明光致发光的模式取决于微腔的几何结构,而非激发强度。本实验中的微腔中的本征模式被认为是Fabry-Perot模式,其中非常强的等离子体与激子之间的耦合被观察到,并导致其可见光区的折射率由2.0下降至1.67。同时在带边发光区内,等离子体与极化激子之间的耦合通过理论计算与实验非常相符的折射率结果而被揭示。
We report the photoluminescence eigen modes of ZnO semiconductor microcavity lied on the Ag/Si substrate at room temperature. The experiment results show that the photoluminescence modes depend on the geometric structure of the microcavity, instead of the excitation intensity. The eigenmode in the microcavity is considered to be the transverse Fabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the refractive index from original 2.0 to 1.67 in visible region. Meanwhile the coupling between plasmon and exciton-polaritons in band-edge region are also demonstrated by assumed effective refractive index 1.92 through simulation with excellent agreement between experimental and theoretical results.
茅惠兵、罗绪强
物理学光电子技术半导体技术
光致发光氧化锌半导体微腔
PhotoluminescenceZnOMicrocavity
茅惠兵,罗绪强.硅银衬底上氧化锌半导体微腔的光致发光本征模式研究[EB/OL].(2013-01-22)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201301-927.点此复制
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