HWCVD法制备非晶和纳米晶WOx薄膜
eposition of amorphous and nano-crystalline WOx films by HWCVD
氧化钨（WOx）作为重要的过渡金属氧化物之一，在许多领域具有广泛的应用，目前已发展出了多种氧化钨的制备工艺。本文利用热丝化学气相沉积（HWCVD）法，在低温低气压的纯氧条件下实现了氧化钨薄膜的沉积。利用X射线衍射(XRD)，拉曼光谱(Ramam)，X射线光电子能谱(XPS)，场发射扫描电子显微镜(FE-SEM)和透射谱等方法对薄膜进行了一系列表征。结果表明，只改变衬底温度，就可以在200℃和300℃条件下分别得到高质量的非晶结构和纳米晶结构的氧化钨薄膜。通过对热力学数据的分析，本文定性地描述了薄膜沉积的过程。
ungsten oxide (WOx) has been widely used in many fields as one of the most important transition-metal oxides, which can be deposited by various technologies. In this report, we investigated the deposition of WOx films by using hot wire chemical vapor deposition (HWCVD) with pure oxygen at low pressure and low substrate temperature. The deposited WOx films are characterized by X-ray diffraction(XRD), Raman, X-ray photoelectron spectroscopy(XPS), Field Emission canning Electron Microscopy(FE-SEM) and transmission spectrum. The test results show that high-quality amorphous and nanocrystalline WOx films can be obtained by controling the substrate temperatures at 200℃ and 300℃. The deposition mechanisms are analyzed based the thermodynamic data.
王春霞、李忠岳、刘艳红
材料科学化学金属元素无机化合物化学工业
HWCVD氧化钨薄膜生长机理
HWCVDtungsten oxide filmgrowth mechanism
王春霞,李忠岳,刘艳红.HWCVD法制备非晶和纳米晶WOx薄膜[EB/OL].(2020-02-07)[2025-08-19].http://www.paper.edu.cn/releasepaper/content/202002-29.点此复制
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