紫外线辅助热处理改善多孔SiO2:F薄膜机械性能研究
Improvement of Mechanical Properties of Porous SiO2:F Thin Films by UV Curing
超大规模集成电路的集成度越来越高，Cu/低k材料系统的引入可 以有效降低互连RC延迟问题。多孔SiO2:F薄膜具有许多优良性能，成为下一代集成电路互连介质候选材料，但因孔隙的引入，薄膜的机械性能显著降低，成为多孔SiO2:F薄膜在互连介质应用中的关键问题。本文利用紫外线辅助热处理的方法对利用sol-gel旋涂法制备的SiO2:F薄膜进行后处理。结果发现薄膜厚度减小，孔隙率增大，这是由于薄膜内的残留有机物的分解造成；FTIR测试结果表明薄膜中的Si-O-Si的笼状结构发生了部分向网状结构转变，CH和羟基的伸缩振动吸收峰减弱，薄膜的微结构发生了变化；介电常数和漏电流密度有所降低；纳米压痕测试薄膜的硬度和弹性模量分别5.87GPa和72.11GPa，提高到未处理时的1倍和2倍，这是由于薄膜内部网状Si-O结构加强所致。
u/low k can reduce RC delay caused by feature size is scaling down to a very small value. Porous SiO2:F thin film may be used in next ULSI in future, but mechanical properties of porous SiO2:F thin film are degradative.It is problems for application in ULSI.In this paper, the porous SiO2:F thin films, which were deposited by sol-gel and SOD, were cured with UV. The thickness of thin film was smaller and porosity became bigger, because organic decomposed. The results of FTIR indicate that the structure change of Si-O-Si chemical bond, the network Si-O-Si enhanced. Dielectric constant and leakages current density were reduced. The hardness and elastic module were 5.87GPa and 72.11GPa separately measured by Nanoindentation.
许金海、曹文磊、黄春奎、兰伟、刘雪芹
微电子学、集成电路材料科学半导体技术
低介电常数，紫外线辅助热处理，硬度，弹性模量
Low k UV Curing Hardness Elastic module.
许金海,曹文磊,黄春奎,兰伟,刘雪芹.紫外线辅助热处理改善多孔SiO2:F薄膜机械性能研究[EB/OL].(2008-05-14)[2025-08-23].http://www.paper.edu.cn/releasepaper/content/200805-362.点此复制
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