La0.67Sr0.33MnO3/GaN异质结的光电效应研究

p-n junction composed La0.67Sr0.33MnO3 and GaN was fabricated by pulsed laser ablation. At room temperature, this La0.67Sr0.33MnO3/GaN heterojunction shows good rectifying properties. The photovoltaic effect of the heterojunction was also studied experimentally. It was found that the maximum photovoltage can reach 71μV, when the La0.67Sr0.33MnO3/GaN heterojunction was exposed to light with a wavelength of 480nm and a power of 1 mW. Further study shows that the photovoltage of the junction increases with decreasing (increasing) of the wavelength (power) of the incident light. A qualitative explanation is given based on the analysis of the band structure of this heterojunction. Our results demonstrate that the La0.67Sr0.33MnO3/GaN heterojunction can be used as optoelectronic device.