锰掺杂氧化亚铜薄膜的制备和输运性质研究

he Cu2O thin films doped with 6% Mn have been fabricated by rf magnetron sputtering on thermally-oxidized-silicon substrates. X-ray diffraction measurements reveal that the (Cu0.94Mn0.06)2O films have a high (200) orientation at elevated substrate temperature. The Mn-doped Cu2O films show primary paramagnetic behaviors above 25 K. Very weak ferromagnetic property interspersed with paramagnetic phase appears near 5 K. The high magnetic moment of 5.3 bohr magnet per Mn ion and high resistivity suggest the valence state of manganese is mainly +1. The transport properties suggest variable-range hopping mechanism. The probabilities of the nearest distance between Mn impurity atoms at different doping concentration (3%, 6%, 9%) have been calculated and the transport properties have been discussed.