单晶硅体寿命与表面复合速率的分离

he surface recombination velocity (SRV) and the bulk lifetime of minority carriers are important electronic properties for silicon solar cell materials. In this work, we focus on the carrier recombination in the bulk and surface, so we separate bulk time and surface recombination velocity by using one-dimensional continuity equation. Different dopant density wafers are investigated to extract the bulk time and SRV, we observe that bulk lifetime dependent upon carrier density influence the density distribution vitally rather than taking bulk lifetime as a constant at high injection level.