关于IGBT的四种结构的研究

In this paper, trench-IGBT is investigated compared with planar-IGBT, and the influences the trench gate has on device performance are analyzed. The CSTBT (Carriers-Stored Trench Gate Bipolar Transistor) structure and the effects of the hole barrier layer on forward on-state voltage of the device are studied. The differences of structures and process of FS-IGBT (Field Stop) compared to PT-IGBT (Punch Through) and NPT-IGBT (Non Punch Through) are investigated, and the performance changes of FS-IGBT caused by the differences are discussed. Finally, the structure and operational principle of RC-IGBT (Reverse Conduction) are studied, and the effects caused by the change of anode region are also figured out.