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SrTiO3(001)衬底上四方晶系FeS薄膜的分子束外延生长

Molecular Beam Epitaxy Growth of Tetragonal FeS Film on SrTiO3(001) Substrate

中文摘要英文摘要

我们报道利用分子束外延生长方法,生长厚度只有1-2个原包厚度具有四方晶体结构的FeS薄膜。外延薄膜和衬底间大的晶格晶格失配导致了单个原包厚度FeS中高密度的缺陷。而在晶格弛豫的双层FeS的表面缺陷密度大大降低。FeS薄膜表面的扫描隧道谱表明衬底对单层薄膜的电子注入的效应。在4.6 K或者更低的温度,实验观测到没有相干峰的,大约1.5 meV的能隙,可能是和没有相位相干的,预配对的库珀对有关。

We report the successful growth of tetragonal FeS film with one or two unit cell (UC) thickness on SrTiO3(001) substrate by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in single UC FeS, while it has been significantly reduced in double UC thick film due to the lattice relaxation. The scanning tunneling spectra on the surface of FeS thin film reveal the electronic doping effect of single UC FeS from the substrate. In addition, at the Fermi level, the energy gaps of approximate 1.5 meV are observed in films of both thickness at 4.6 K and below. The absence of coherence peaks of gap spectra may be related to the preformed Cooper-pairs without phase coherence.

林海城、赵琨、季帅华、黄万通、陈曦、薛其坤、胡小鹏

物理学晶体学材料科学

分子束外延铁基超导体FeS

molecular beam epitaxyiron-based superconductorFeS

林海城,赵琨,季帅华,黄万通,陈曦,薛其坤,胡小鹏.SrTiO3(001)衬底上四方晶系FeS薄膜的分子束外延生长[EB/OL].(2017-05-31)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201705-1445.点此复制

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