Sb掺杂SnO2透明导电膜的溶胶-凝胶法制备及其性能研究
Studies of Preparation and Performs of Sb-doped SnO2 Films Deposited by Sol-gel Process
以无机金属盐氯化锡(SnCl4•5H2O)和三氯化锑(SbCl3)为原料,用溶胶-凝胶提拉法制备了掺Sb的SnO2透明导电薄膜,研究了溶胶回流时间、掺杂量、涂覆层数和热处理温度对SnO2:Sb薄膜的方块电阻和透射率的影响规律,实验发现:溶胶回流三个小时所制备薄膜的导电性能比一个小时的有很大的提高,同时具有更良好的透光性。在溶胶回流时间3h、400℃热处理下所制备的掺Sb量为10mol%的薄膜的方块电阻和在可见光区的平均透射率分别达到了较好的水平(方块电阻107Ω/□,平均透射率80%)。
onductive thin films of Sb-doped tin oxide were prepared by using inorganic metallic salt SnCl4•5H2O and SbCl3 as precursors through sol-gel process. The influences of the reflux time of sol、the addition amount ofSbCl3、the coating layers and the heating treatment temperature to the sheet resistance and transmittance of the thin films have been investigated. The experimental results show that the SnO2: Sb thin films deposited by sol-gel processing have favorable conductivity and transmittance in visible light range. The sheet resistance of the SnO2 with 10mol% Sb-doping annealed at 400℃ can reach 107Ω/ □, the average transmittance of the SnO2: Sbfilms was 80%.
彭丽萍、徐凌
半导体技术
SnO2方块电阻溶胶-凝胶法薄膜透射率
SnO2Sheet resistanceSol-gel methodFilmsTransmissivity
彭丽萍,徐凌.Sb掺杂SnO2透明导电膜的溶胶-凝胶法制备及其性能研究[EB/OL].(2007-05-18)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/200705-286.点此复制
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