Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling
Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling
We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $ \Phi_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. The charge collection efficiency (CCE) is under development.
Chengjun Yu、Mei Zhao、Hao Zeng、Gregor Kramberger、Congcong Wang、Mingzheng Ding、Yuhang Tan、Xiyuan Zhang、Han Cui、Shuqi Li、Huaxiang Yin、Suyu Xiao、Tao Yang、Mingjie Zhai、Yunyun Fan、Xin Shi、Zhijun Liang、Gaobo Xu、Kewei Wu、Qionghua Zhai、Shuiting Xin、Mengzhao Li、Jo?o Guimar?es da Costa、Gangping Yan、Xuewei Jia、Kai Liu、Maoqiang Jing
半导体技术
Chengjun Yu,Mei Zhao,Hao Zeng,Gregor Kramberger,Congcong Wang,Mingzheng Ding,Yuhang Tan,Xiyuan Zhang,Han Cui,Shuqi Li,Huaxiang Yin,Suyu Xiao,Tao Yang,Mingjie Zhai,Yunyun Fan,Xin Shi,Zhijun Liang,Gaobo Xu,Kewei Wu,Qionghua Zhai,Shuiting Xin,Mengzhao Li,Jo?o Guimar?es da Costa,Gangping Yan,Xuewei Jia,Kai Liu,Maoqiang Jing.Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling[EB/OL].(2021-06-29)[2025-08-02].https://arxiv.org/abs/2106.15421.点此复制
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