|国家预印本平台
首页|Intrinsic Electron Mobility Limits in beta-Ga2O3

Intrinsic Electron Mobility Limits in beta-Ga2O3

Intrinsic Electron Mobility Limits in beta-Ga2O3

来源:Arxiv_logoArxiv
英文摘要

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to GaN, the electron mobility is 10x lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and strong bond ionicity. Based on the theoretical and experimental analysis, we provide an empirical expression for electron mobility in beta-Ga2O3 that should help calibrate its potential in high performance device design and applications.

Xing、Huili、Amit Verma、Zhi Guo、Debdeep Jena、Nan Ma、Nicholas Tanen、Tengfei Luo

GraceGraceGraceGraceGraceGrace

10.1063/1.4968550

物理学晶体学半导体技术

Xing,Huili,Amit Verma,Zhi Guo,Debdeep Jena,Nan Ma,Nicholas Tanen,Tengfei Luo.Intrinsic Electron Mobility Limits in beta-Ga2O3[EB/OL].(2016-10-13)[2025-05-17].https://arxiv.org/abs/1610.04198.点此复制

评论