镓掺杂氧化锌透明导电薄膜的制备
Preparation of Ga doped ZnO transparent conducting films
本文采用MOCVD方法制备出了Ga掺杂的氧化锌透明导电薄膜，系统研究了氧气流量对样品的结构、电学性质及透过率的影响，发现在合适的氧气流量下可以实现高透过率、低电阻率的ZnO透明导电薄膜，透过率接近80%，方块电阻最低达到18.28ohm/sq。
In this paper the Ga doped ZnO transparent conducting films was prepared by MOCVD. Studied the influence of oxygen flux on structure, electrical properties and transparent of the samples. high- transparence , low-resistivity ZnO transparent conductive film with average transmittance of 80%，sheet resistance of 18.28ohm/sq, can be achieved at proper oxygen flux.
杜国同、程轶、迟景阳、赵涧泽、梁红伟、李雪、孙景昌、胡礼中
半导体技术电子元件、电子组件电工材料
ZnO 薄膜MOCVD透明导电薄膜
ZnO thin flimMOCVDtransparent conducting thin film
杜国同,程轶,迟景阳,赵涧泽,梁红伟,李雪,孙景昌,胡礼中.镓掺杂氧化锌透明导电薄膜的制备[EB/OL].(2009-05-26)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200905-693.点此复制
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