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氮掺杂石墨烯/碳纳米管的制备及电容性能

Preparation and Capacitance Performance of Nitrogen-Doped Graphene / Carbon Nanotubes

中文摘要英文摘要

本文以构造不同维度的界面化学键接为目标,通过一步化学气相沉积法(CVD)在NiMgAl层状三元金属氢氧化物(LDHs)催化剂上生长得到氮掺杂石墨烯/碳纳米管(N-G / CNTs)复合材料。探究了三元金属催化剂离子比例、生长温度、甲烷流量以及生长时间对N-G / CNTs复合材料电容性能的影响;证实了N-G / CNTs复合材料中的石墨烯和碳纳米管之间通过共价键连接,促进了不同维度材料之间有效界面的构建,并且氮掺杂提高了N-G / CNTs复合材料的润湿性,有利于复合材料电化学性能的提升。

his research aims to construct interface chemical bonding in different dimensions. Nitrogen-doped graphene / CNTs (N-G / CNTs) composites were grown on NiMgAl layered ternary metal hydroxide (LDHs) catalysts by one-step chemical vapor deposition (CVD). The effects of ion ratio in ternary metal catalyst, growth temperature, methane flowrate and growth timeon the capacitance performance of N-G / CNTs composites were investigated. It is confirmed that the graphene and CNTs in the N-G / CNTs composites are connected by covalent bonds, which promotes the construction of effective interfaces between different dimensions of materials. And nitrogen doping improves the wettability of N-G / CNTs composites, which is beneficial to the improvement of the electrochemical performance of the composites.

胡宝山、金燕、叶娇

材料科学电化学工业

石墨烯/碳纳米管复合材料氮掺杂化学气相沉积法超级电容器

Graphene/carbon nanotubes compositesNitrogen dopinghemical vapor depositionSupercapacitor

胡宝山,金燕,叶娇.氮掺杂石墨烯/碳纳米管的制备及电容性能[EB/OL].(2020-04-27)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/202004-270.点此复制

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