一种基于薄膜体声波谐振器的高频滤波器设计
High Performance C-Band FBAR Filter
本文提出了一种基于薄膜体声波谐振器（FBAR）的高频C-Band带通滤波器设计方法。由此得到的滤波器实测结果，通带中心（5.2GHz）插入损耗小于2.0 dB，带外抑制大于50 dB，且测试数据与三维电磁仿真结果相吻合。并在此基础上介绍了一种提升滤波器带外抑制的方法，即在滤波器两个并联谐振支路之间增加一个电容，通过移动传输零点来改善带外信号衰减程度。此方法增加了FBAR滤波器设计在满足带外抑制方面的灵活性。
In this paper a RF band pass filter in C-band based on film bulk acoustic resonator (FBAR) technology is developed. The measured insertion loss is less than 2.0 dB at the center frequency (5.2GHz) of the filter, and the signal attenuation near the pass band of the filter is greater than 50 dB. The measurement data are in good agreement with the design employing three dimensional electromagnetic simulation techniques. A method to move the transmission zeros of the FBAR filter is proposed by adding a capacitor element between the two shunt branches of the filter. Using the technique, an FBAR filter chip can be configured to meet different rejection specifications potentially.
逯遥、张智欣、张浩、庞慰、张代化
电子元件、电子组件电子电路微电子学、集成电路
射频MEMS高频C-band薄膜体声波谐振器射频带通滤波器
RF MEMShigh frequency C-bandFBARRF band pass filter.
逯遥,张智欣,张浩,庞慰,张代化.一种基于薄膜体声波谐振器的高频滤波器设计[EB/OL].(2014-01-16)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201401-737.点此复制
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