离子注入碳化硅的高温退火性质研究

fter ion implantation doping, it needs to be annealed at high temperature to activate the implanted donor or acceptor impurities. In this paper, nitrogen ion implantation was carried out on the carbon surface of 2-inch high resistivity 4H-SiC single crystal. 5mm square samples were cut by laser and annealed at 1450 ℃. The surface morphology and element ratio of the samples before and after high temperature annealing were characterized by SEM and EDS. The crystal quality and optical properties of the samples before and after high temperature annealing were characterized by XRD and UV-vis spectrophotometer. The results show that high temperature heat treatment can effectively repair the crystal damage of 4H-SiC single crystal caused by nitrogen ion implantation. Through the analysis of SEM images, it is found that the surface morphology of 4H-SiC single crystal on the ion implantation side becomes worse after high temperature annealing..