基于GG-NMOS和二极管的片上ESD防护电路
On-Chip ESD Protection Circuit Based on GG-NMOS and Diode
ESD问题随着工艺尺寸不断减小而变得日益突出，本篇文章主要实现了基于片上系统的二极管和栅接地NMOS管两种ESD防护电路，通过对两种ESD防护电路的分析与比较，并运用TCAD器件仿真软件模拟两种电路，得到两种防护电路的最小钳位电压和温度特性，最后通过比较得出栅接地NMOS防护电路的防护效果更佳。
he problem of ESD has becoming increasingly important as the size of process decreasing continually. This paper mainly realizes two circuits for ESD protection based on system-on chip which are diode circuit and gate-grounded circuit; we can get the smallest clamped voltage and the character of temperature through analyzing and comparing two kinds of circuits using the TCAD simulation software, then we can conclude that the protection performance of gate-grounded NMOS circuit is superior to diode circuit.
梁华国、史冬霞、黄正峰、刘彦斌、汪健
微电子学、集成电路电子电路半导体技术
静电放电人体模型栅接地MOS二极管防护
Electrostatic dischargeHuman body modelGate-grounded MOSDiode protection
梁华国,史冬霞,黄正峰,刘彦斌,汪健.基于GG-NMOS和二极管的片上ESD防护电路[EB/OL].(2012-03-21)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201203-603.点此复制
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