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氧化锡稀磁半导体研究进展

Research Progress of Tin Oxide Diluted Magnetic Semiconductors

中文摘要英文摘要

稀磁半导体是结合电荷导电性能与电子自旋,使材料同时具有铁磁性以及导电性能的一类自旋电子学材料。找到性能优良、居里温度高于室温的稀磁半导体是过去十几年的研究热点。氧化锡是一种宽带隙n型氧化物半导体,在气体传感器、透明电极、光催化等领域都有广泛的应用,氧化锡是氧化物稀磁半导体的重要研究分支之一,过渡金属掺杂氧化锡体系已实现了室温铁磁性。本文主要介绍氧化锡基稀磁半导体的研究进展。

ilute magnetic semiconductors are spin electrons that combine charge conductivity with electron spin to make the material possess both ferromagnetic and conductive properties. Finding dilute magnetic semiconductors with excellent performance and a Curie temperature higher than room temperature is a research hotspot in the past ten years. Tin oxide is a wide bandgap n-type oxide semiconductor and has a wide range of applications in gas sensors,transparent electrodes,and photocatalysis. Tin oxide is one of the important research branches of oxide dilute magnetic semiconductors, and transition metal-doped tin oxide systems have achieved room temperature ferromagnetism. The research progress of SnO2-based dilute magnetic semiconductors is discussed in detail.

刘天府、李博、冯琴、江凤

半导体技术

稀磁半导体自旋电子学氧化锡过渡金属

diluted magnetic semiconductorspintronicstin oxidetransition metals

刘天府,李博,冯琴,江凤.氧化锡稀磁半导体研究进展[EB/OL].(2018-07-04)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201807-10.点此复制

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