基于黑硅太阳能电池SiO2/SiNx叠层钝化膜的研究

Large area (156×156mm2) black silicon solar cells with various passivation films was fabricated by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 12.9%. after depositing the SiO2 and SiNx:H passivation thin films, the conversion efficiency of black silicon solar cells increase to 16.0% and 16.4%, respectively. Compare to the single surface passivated films of black silicon solar cells, the SiO2/SiNx:H stacks exhibits the higher electrical performance with the Voc of 0.622, Isc of 8.391, and efficiency of 16.8%. The investigation of internal quantum efficiency (IQE) demonstrated that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration, and SiNx:H films suppress the Shockley-Read-Hall (SRH) recombination leading to the development of the electrical performance of b-Si solar cells.?