具有深高宽比的SiO2/GaAs纳米图形衬底的制作工艺
Fabrication of nano-patterned SiO2/GaAs Substrate with high aspect ratio trenches
本文采用电子束光刻技术及反应离子刻蚀技术在GaAs（100）衬底上制作了深宽比>1的（深宽比=槽深/槽宽）周期性的SiO2纳米槽。这种纳米图形衬底可用于纳米选区外延生长高质量的InP。为了实现高深宽比SiO2纳米图形，Cr作为刻蚀保护掩膜沉积在SiO2薄膜上。通过这一方式可实现SiO2的深刻蚀。同时本文采用湿法刻蚀改善了反应离子刻蚀后SiO2图形侧壁的形貌。最终结果显示在Cr掩膜的保护下可实现对SiO2的深刻蚀并得到了具有深宽比约1.3的SiO2纳米图形。
Periodic SiO2 nano-trenches with aspect ratio>1(aspect ratio=trench-height/trench-width) on GaAs(100) substrate was fabricated using electron beam lithography (EBL) in combine with reactive iron etching (RIE). This nano-patterned substrate can be used for nano-selective area growth (NAG) of high-quality InP film. Cr film as the protective layer was deposited on the surface of SiO2 film in order to achieve high aspect ratio nano-trenches. By this way, deep-etching of SiO2 can be realized. Wet etching was also used to improve the morphology of the SiO2 sidewall after RIE process. The final result showed that 400nm-thick SiO2 trenches with aspect ratio about 1.3 was achieved. ?
王琦、李玉斌
半导体技术
1 纳米图形衬底2 SiO23反应离子刻蚀
1 nano-patterned substrate2 SiO23 reactive iron etching
王琦,李玉斌.具有深高宽比的SiO2/GaAs纳米图形衬底的制作工艺[EB/OL].(2013-12-27)[2025-08-10].http://www.paper.edu.cn/releasepaper/content/201312-997.点此复制
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