晶体学取向对0.90(Bi0.5Na0.5)TiO3-0.10(Bi0.5K0.5)TiO3 薄膜压电和介电性能的影响
Effects of crystallographic orientation on the piezoelectric and dielectric properties of 0.90(Bi0.5Na0.5)TiO3-0.10(Bi0.5K0.5)TiO3 thin films
为了深刻的研究晶体取向对薄膜的压电和介电性能的影响，本文利用溶胶-凝胶法在(100)、(110)、(111)取向的Nb掺杂的SrTiO3单晶基片上制备了三方相0.90(Bi0.5Na0.5)TiO3-0.10(Bi0.5K0.5)TiO3 （简称为BNT-BKT）薄膜。X射线衍射(XRD)结果表明所有的薄膜都表现出高度的外延生长。利用压电力显微镜（PFM）测试了不同取向的薄膜的畴结构及电场导致的应变。根据应变曲线的斜率得到了(100) 取向的薄膜具有最大的有效压电系数d33*~201pm/V。介电温谱测试结果表明不同取向的薄膜具有不同的居里温度，主要和不同取向的薄膜中的应力状态的不同有关。介电频谱结果表明（111）取向的薄膜具有最大的介电常数，主要是由于偶极子自发极化的方向和薄膜的取向一致有关。研究结果表明晶体学取向对薄膜的压电和介电性能有巨大的影响。
o attain a deep understanding of piezoelectric and dielectric properties dependence of crystallographic orientations, the rhombohedral 0.90(Bi0.5Na0.5)TiO3-0.10(Bi0.5K0.5)TiO3 (abbreviate as BNT-BKT) thin films were prepared on (100)-, (110)- and (111)-oriented Nb-doped SrTiO3 substrates by sol-gel method. The XRD patterns show that all of the thin films were highly epitaxial growth. The domain structure and electric field-induced strain were measured by piezoelectric force microscopy (PFM). The (100)-oriented thin films showed the biggest effective piezoelectric coefficient d33*~200 pm/V by the slope of D-V sloops. The different Curie temperature in various oriented thin films can be attributed to the different stress level. The biggest dielectric constant of (111)-oriented thin films can be attributed to the consistency between the spontaneous polarization direction and orientation. These results show that the crystallographic orientations have significant effects on the piezoelectric and dielectric properties.
翟继卫、李朋
晶体学物理学
BNT-BKT薄膜晶体学取向结构电学性能
BNT-BKT thin filmsrystallographic orientationStructureElectrical properties
翟继卫,李朋.晶体学取向对0.90(Bi0.5Na0.5)TiO3-0.10(Bi0.5K0.5)TiO3 薄膜压电和介电性能的影响[EB/OL].(2016-01-07)[2025-05-24].http://www.paper.edu.cn/releasepaper/content/201601-158.点此复制
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