极化诱导的p-AlxGa1-xN电子阻挡层的n-ZnO/p-GaN 异质结发光二极管
n-ZnO/p-GaN heterojunction light emitting diodes with a polarization-induced graded-p-AlxGa1-xN electron blocking layer
本文研究了极化诱导的变组分p-AlxGa1-xN电子阻挡层对于n-ZnO/p-GaN 异质结发光二极管发光性质的影响。与没有电子阻挡层的和带有不变组分的p-Al0.4Ga0.6N电子阻挡层的n-ZnO/p-GaN异质结发光二极管相比，极化诱导的电子阻挡层能够有效的阻挡电子从n-ZnO注入到p-GaN中，并且有效的提高了空穴从p-GaN注入到n-ZnO中。从这个器件的截面发光谱中，ZnO相关的紫外发射峰占主要发光地位。这篇文章会从极化电荷和能带理论两个方面讨论极化诱导的变组分电子阻挡层的机理。这个研究显示出了极化诱导的电子阻挡层可以提高n-ZnO/p-GaN 异质结发光二极管的器件性能。
n-ZnO/p-GaN heterojunction light emitting diodes with a polarization-induced graded-p-AlxGa1-xN electron blocking layer (PIEBL) were fabricated. Comparing with n-ZnO/p-GaN and n-ZnO/p-Al0.4Ga0.6N/p-GaN LEDs, the PIEBL can effectively block the electron injecting from ZnO to GaN and promote holes injecting from GaN to ZnO. The dominated ZnO related ultraviolet (UV) emission was observed from edge emission of this device. The mechanism of PIEBL was also discussed in term of polarization and energy band theory. This study suggests that the PIEBL is an excellent electron blocking layer for ZnO based light emitting diodes and laser diodes.
郭浩、申人升、杜国同、房硕、张赫之、张克雄、梁红伟、刘远达
光电子技术半导体技术电子元件、电子组件
MOCVDZnOGaNLED
MOCVDZnOGaNLED
郭浩,申人升,杜国同,房硕,张赫之,张克雄,梁红伟,刘远达.极化诱导的p-AlxGa1-xN电子阻挡层的n-ZnO/p-GaN 异质结发光二极管[EB/OL].(2012-04-19)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201204-277.点此复制
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