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High-Fidelity Electron Spin Gates for Scaling Diamond Quantum Register

High-Fidelity Electron Spin Gates for Scaling Diamond Quantum Register

来源:Arxiv_logoArxiv
英文摘要

Diamond is a promising platform for quantum information processing as it can host highly coherent qubits that could allow for the construction of large quantum registers. A prerequisite for such devices is a coherent interaction between nitrogen vacancy (NV) electron spins. Entanglement between dipolar-coupled NV spin pairs has been demonstrated, but with a limited entanglement fidelity and its error sources have not been characterized. Here, we design and implement a robust, easy to implement entangling gate between NV spins in diamond and quantify the influence of multiple error sources on the gate performance. Experimentally, we demonstrate a record gate fidelity of $F=(96.0 \pm 2.5)$ % under ambient conditions. Our identification of the dominant errors paves the way towards NV-NV gates beyond the error correction threshold.

Timo Joas、Florian Ferlemann、Roberto Sailer、Philipp J. Vetter、Jingfu Zhang、Ressa S. Said、Tokuyuki Teraji、Shinobu Onoda、Tommaso Calarco、Genko Genov、Matthias M. M??ller、Fedor Jelezko

10.1103/PhysRevX.15.021069

物理学

Timo Joas,Florian Ferlemann,Roberto Sailer,Philipp J. Vetter,Jingfu Zhang,Ressa S. Said,Tokuyuki Teraji,Shinobu Onoda,Tommaso Calarco,Genko Genov,Matthias M. M??ller,Fedor Jelezko.High-Fidelity Electron Spin Gates for Scaling Diamond Quantum Register[EB/OL].(2025-06-22)[2025-07-02].https://arxiv.org/abs/2406.04199.点此复制

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