不同薄膜厚度a-C:Fe薄膜的阻变现象研究
Research on different thickness resistive switching effects of a-C:Fe thin films
本文采用直流磁控溅射法生长了不同厚度(50nm, 100nm, 150 nm)的Fe掺杂非晶碳膜(a-C:Fe)，并制备了Pt/Al/a-C:Fe/Au/Ti结构的存储单元。采用Raman对薄膜结构进行了表征，并利用Keithley 2400半导体特性测试仪测量了存储单元的I-V特性。在所有存储单元中都发现了反常阻变特性，并且随薄膜厚度的增加，存储单元的阻变窗口变大，但其循环耐受性也会变差。综合考虑存储单元的循环耐受性和保持特性，Pt/Al/a-C:Fe (100 nm)/Au/Ti的阻变性能最佳，阻变窗口均保持在20左右，保持时间可达10^4 s。
In this paper, Fe-doped carbon films with different thickness (50, 100, 150 nm) were deposited by DC magnetron sputtering method and Pt/Al/a-C:Fe/Au/Ti memory cells were prepared. Raman spectrum was employed to analyze the structure. Keithley 2400 was used to measure the I-V performance of the memory cells. Abnormal switching behaviors were observed in all cells. With the increasing testing cycles, the memory ratio gets larger while the endurance gets lower. Considering the endurance and retention properties, the RRAM cell with 100 nm a-C:Fe film showed the best performance with on/off-resistance ratio ～20, and retention time more than 10^4 s.
汪琳、张电、李泰然、任兵、张淑玮、王林军、周家伟
半导体技术
材料学阻变现象非晶碳膜厚
materials scienceresistive switching effectamorphous carbonthickness
汪琳,张电,李泰然,任兵,张淑玮,王林军,周家伟.不同薄膜厚度a-C:Fe薄膜的阻变现象研究[EB/OL].(2016-11-25)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201611-354.点此复制
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