磁控溅射制备TaN薄膜研究
Effects of processing parameters on the properties of TaN thin films deposited by reactive sputtering
使用磁控反应溅射制备TaN薄膜，研究不同氮分压，工作气压，溅射功率以及基片温度等条件对薄膜的结构和性能影响，得到了薄膜的方阻以及TCR随这些因数的变化规律。研究发现，在氮分压从1%至20%变化时，多相共存的TaN薄膜表现出与基片相同方向的择优取向；当氮分压高于11%时，薄膜的方阻增长较快。工作气压和溅射功率对薄膜的溅射速率影响较明显。基片温度对薄膜的方阻和TCR影响很大，当温度高于500℃时，薄膜的方阻和TCR均急剧减小。
he effects of processing parameters of tantalum nitride thin film deposited by reactive dc magnetron sputtering have been investigated. The properties of the films, such as composition, sheet resistance, TCR, with the change in the processing parameters have been characterized. The result shows that the composition change is associated with a increase of the N2 partial pressure, from 1 to 20%. The sheet resistance increases dramatically when the N2 partial pressure is over 11%. The total gas pressure and sputtering power can affect the sputtering rate of the film. The influence of the sheet resistance and TCR by the depositing temperature is observed.
康杰
电子元件、电子组件半导体技术冶金技术
磁控溅射氮化钽薄膜方阻电阻温度系数
antalum nitride filmreactive magnetron sputteringsheet resistancetemperature coefficient of resistance
康杰.磁控溅射制备TaN薄膜研究[EB/OL].(2009-03-31)[2025-08-06].http://www.paper.edu.cn/releasepaper/content/200903-1159.点此复制
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