垂直对准量子点结构对光学性质的影响
he effect of vertically coupled quantum dots structure on optical properties
利用分子束外延方法(MBE)经应变自组装生长模式(SK)可以制备半导体量子点结构,通过调整结构参数和外延参数,多层量子点可以延生长方向呈现不同分布方式,其中沿生长方向垂直对准的量子点对于制备激光器有更重要的意义。本文对国内外垂直对准量子点的相关工作进行了总结,归纳了垂直对准量子点的量子点层厚度、间隔层厚度等参数对材料光学性质的影响。
Semiconductor quantum dots can be prepared by molecular beam epitaxy through SK mode. By adiusting the structure parameters and grouth parameters, multi-layer quantum dots can distribute in different patterns along growth direction. Vertically coupled quantum dots is important for the preparation of quantum dot lasers. In this paper, the work of several groups on vertically coupled quantum dots is summarized, such as the effect of quantum dots thickness, spacer thickness on optical properties of materials.
张春玲、姚江宏
物理学半导体技术光电子技术
量子点分子束外延垂直对准PL谱
quantun dotsmolecular beam epitaxyvertically coupledPL
张春玲,姚江宏.垂直对准量子点结构对光学性质的影响[EB/OL].(2010-12-17)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201012-640.点此复制
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