TCMC65nmGP与LP工艺比较
Comparison of GP and LP Technology in TSMC Process
本文主要针对TSMC65nm工艺进行深入研究，充分比较了GP（General Purpose）和LP（Low Power）两种工艺下漏电，跨导增益和MOS开关导通电阻这三个方面的不同，从比较的结果可以发现：LP工艺相较GP工艺在漏电和功耗方面有非常大的优势，而GP工艺的导通电阻比较小，两种工艺在跨导增益方面的性能相当，基于两种工艺的特点需要根据实际电路的规模与要求选择相应的工艺。
微电子学、集成电路
65nm工艺漏电流跨导增益导通电阻。
程旭,李立,曾晓洋.TCMC65nmGP与LP工艺比较[EB/OL].(2014-12-31)[2025-09-21].http://www.paper.edu.cn/releasepaper/content/201412-1029.点此复制
In this paper comparison of GP(General Purpose) and LP(Low Power) process at 65nm technology node is presented. The leakege, transconductance and conduction resistance between the process are very different. LP technology has big superiority in the leakage and power consumption, on the other hand, the conduction resistance in GP is much small. As a result, we should choose the appropriate process according to the application.
65nmleakagetransconductanceconduction resistance.
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