ECR等离子体辅助双靶双激光共烧蚀制备AlxGa1-xN薄膜

We present a method for the fabrication of GaN (x=0), AlN (x=1) and AlxGa1-xN films by plasma assisted pulsed laser ablation using Al and GaAs as the raw materials. GaN, AlN and AlxGa1-xN thin films were fabricated at normal temperature by ablation of polycrystalline GaN target or metallic Al target, or co-ablation of GaN and Al in the environment of electron cyclotron resonance (ECR) nitrogen plasma. The results of morphologic examination, structural analysis and optical measurements reveal that the fabricated AlxGa1-xN film exhibits uniform and dense hexagonal wurtzite structure with a thickness of about 250 nm and Al content above 0.6. The AlxGa1-xN film shows high optical transmittance with its absorption edge between those of AlN and GaN.