Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2
Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2
We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK.
Anand P. S. Gaur、Majid Ahmadi、Maxime J-F Guinel、Ram S. Katiyar、Satyaprakash Sahoo
物理学材料科学
Anand P. S. Gaur,Majid Ahmadi,Maxime J-F Guinel,Ram S. Katiyar,Satyaprakash Sahoo.Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2[EB/OL].(2013-02-23)[2025-08-23].https://arxiv.org/abs/1302.5865.点此复制
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