硅烷浓度对VHF-PECVD制备过渡区微晶硅薄膜特性的影响

hin films of amorphous/microcrystalline silicon transition zone prepared at different silane concentration by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) have been studied in this paper. The influence of silane concentration on microstructure,photoelectric properties and growth of these materials have been investigated. The results show that in a certain extent with the increase of silane concentration,the structure of material evaluated from microcrystalline to amorphous,the deposition rate and the photosensitivity had been improved.However,the conductivity had been reduced firstly and then decreased. The optimized silane concentration for thin films deposition under our current growth system is about 2-4%,at which better photoelectric properties can be obtained.