GaAs,SiO2,Pt和Ti的介电系数
erahertz Permittivity of GaAs, SiO2, Pt and Ti
肖特基二极管通常由半导体、介质、导体和超导体构成。本文简单地综述了构成肖特基二极管的砷化镓(Gallium Arsenide，GaAs)，二氧化硅(Silicon Dioxide，SiO2)，铂金(Platinum，Pt)和钛(Titanium，Ti)的太赫兹频段介电系数。首先，分析了基于太赫兹波透射和反射系数的薄膜的复数介电系数提取方法。讨论了太赫兹频段砷化镓色散的Drude-Lorentz模型、二氧化硅相对平坦的介电系数实部和虚部，钛的复数折射率。砷化镓半导体、铂金和钛导体都是色散介质，即复数的介电系数是随频率变化的。在数值计算方法中，时域有限差分法(Finite-Difference Time-Domain, FDTD)是处理色散介质的有效方法，文中给出了基于移位算子FDTD方法处理色散介质的推导流程图。
Schottky diode is usually made of all kinds of semiconductor, medium, conductor and superconductor. The Terahertz permittivity of Gallium Arsenide (GaAs), Silicon Dioxide (SiO2), Platinum (Pt) and Titanium (Ti) for Schottky diode is briefly reviewed. Firstly, complex permittivity retrieval method of thin film based on the transmission and reflection coefficients of terahertz wave incident on the thin film is presented. The dispersive Drude-Lorentz model for GaAs, the relative flat value of real and imaginary parts of the permittivity for SiO2, and complex refractive index for Ti at Terahertz frequency is discussed. Semiconductor GaAs, conductor Pt and Ti are dispersive media i.e. the complex permittivity is a frequency response function. Among numerical method, Finite-Difference Time-Domain (FDTD) method is a popular algorithm for dispersive media. The deduction flowchart of shift operator FDTD method for dispersive media is given.
王茂琰、韩娜、董宇亮、张猛、徐军、李海龙
半导体技术电子元件、电子组件电工材料
无线电物理介电系数太赫兹色散方法
Radio physicspermittivityTerahertzdispersivemethod
王茂琰,韩娜,董宇亮,张猛,徐军,李海龙.GaAs,SiO2,Pt和Ti的介电系数[EB/OL].(2014-03-21)[2025-08-10].http://www.paper.edu.cn/releasepaper/content/201403-665.点此复制
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