荧光粉SrSi2O2N2:Eu2+ ,Dy3+, Li+ 的结构与发光性能

Oxynitride phosphor SrSi2O2N2:Eu2+, Dy3+, Li+ has been synthesized by high temperature solid state reaction method. The real crystal structure of SrSi2O2N2 was obtained by the Retvield refinement based on the X-ray deffraction. The photoluminescece properties of Sr0.91Si2O2N2: 0.01Eu2+, 0.04Dy3+, 0.04Li+ have been investigated in detail. Upon 400 nm excitation (n-UV GaN chips), yellow - green emission in the range of 450 nm to 650 nm was detected in the optimal Sr0.91Si2O2N2: 0.01Eu2+, 0.04Dy3+, 0.04Li+ , which centered at ~ 539 nm (FWHM ≈ 76 nm). The emission intensity of Sr0.91Si2O2N2: 0.01Eu2+, 0.04Dy3+, 0.04Li+ is 1.7 times of Sr0.99Si2O2N2: 0.01Eu2+ and 1.1 times of that COM-Ba1.3Ca0.7SiO4:Eu2+ (S-525). And still remain 64.1% at 150 C. All of the results indicate that SrSi2O2N2: Eu2+, Dy3+, Li+ can be used in n-UV-pumped white light emitting diodes.