硅基ZnO纳米棒阵列薄膜的表面光伏特性研究
Surface photovoltaic properties of Si-based ZnO nanorod array films
为研究硅基ZnO纳米棒阵列薄膜的表面光伏特性,采用籽晶辅助化学水浴沉积法:即先用磁控溅射法在P-Si(100)衬底上制备一层ZnO薄膜作为籽晶层,然后利用化学水浴沉积法生长ZnO纳米棒阵列薄膜。利用扫描电子显微镜、X射线衍射仪和光致发光谱对样品进行表征,结果表明,硅衬底上生长的ZnO纳米棒基本沿C轴生长,薄膜杂质缺陷极少,具有良好的紫外发光特性。基于Kelvin探针扫描系统的表面光伏技术被用于研究硅基ZnO 纳米棒阵列薄膜的表面光伏特性。表面光伏和它的时间分辨过程被用来分析硅基ZnO纳米棒阵列薄膜的能级信息,由此得出硅基ZnO纳米棒阵列薄膜中被激发光电子的寿命能级较少,为制作硅基ZnO纳米棒器件提供了理论参考。
In this paper, ZnO nanorod arrays were prepared by seed-assisted chemical bath deposition, in which the ZnO films prepared by magnetr on sputtering were used as the seed layers on the P-Si (100) substrate. ZnO nanorod array, synthesized by wet chemical bath deposition method, which was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The results show that ZnO nanorods with very few defects, which is basically along the c-axis growth, have good UV light-emitting characteristics. Surface photovoltage (SPV) technique was employed to investigate the surface photovoltage behavior of ZnO nanorod array. The surface photovoltage and its time-resolved evolution process are used to determine the energy level structure of the ZnO nanorod array. As a result, the life level of the photoelectron in Si-based ZnO nanorod arrays is very few.
刘爱民、刘国强、桑永昌、刘一婷、轩君、张炳烨
光电子技术半导体技术物理学
ZnO纳米棒阵列Kelvin探针水浴沉积法表面光伏能级
ZnONanorod arrayKelvin Probechemical bath depositionsurface photovoltageenergy level
刘爱民,刘国强,桑永昌,刘一婷,轩君,张炳烨.硅基ZnO纳米棒阵列薄膜的表面光伏特性研究[EB/OL].(2012-03-29)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201203-804.点此复制
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