基于饱和导通压降的IGBT老化机理分析

Insulated gate bipolar transistor (IGBT) is often used in the motors of automobiles and trains, as well as in switch power supplies of aerospace equipment. The failure of IGBTs can cause a decline in the efficiency of the system, even result in the failure of the system directly. By identifying and monitoring the faileure precursor parameters of IGBTs can predict and avoid the failure of IGBTs effectively. The paper put forward two kinds of accelerated aging experiment methods, and studied the impacts of IGBTs under the condition of high temperature and great temperature gradient. The external characteristic parameters of IGBTs were real-time collected by NI-PXI chassis integrated digital multimeter module using Labview. Based on temperature aging test of IGBTs, the saturation conduction voltage Vce of IGBTs which is the most main characteristic parameters in aging is monitored. Combined with analysis of aging mechanism, the paper has given the relationship between saturation conduction voltage Vce and the two kinds of aging mode, which are bonding line loss and solder coating aging, finally get the conclusion that Vce incereaes with bonding line loss and decrease with solder coating aging.